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savantic semiconductor product specification silicon pnp power transistors 2SB407 description with to-3 package low collector saturation voltage wide area of safe operation applications for power amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -30 v v ceo collector-emitter voltage open base -30 v v ebo emitter-base voltage open collector -10 v i c collector current -7 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB407 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ;i b =0 -30 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -30 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -10 v v cesat collector-emitter saturation voltage i c =-6a; i b =-0.6a -1.0 v v besat base-emitter saturation voltage i c =-6a; i b =-0.6a -1.5 v i cbo collector cut-off current v cb =-30v; i e =0 -10 a i ebo emitter cut-off current v eb =-10v; i c =0 -10 a h fe dc current gain i c =-1a ; v ce =-1.5v 80
savantic semiconductor product specification 3 silicon pnp power transistors 2SB407 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)

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